{"id":310433,"date":"2024-12-10T20:18:26","date_gmt":"2024-12-10T20:18:26","guid":{"rendered":"https:\/\/www.evearly.news\/en\/panjit-introduces-automotive-grade-60-v-n-channel-mosfet\/"},"modified":"2024-12-10T20:18:26","modified_gmt":"2024-12-10T20:18:26","slug":"panjit-introduces-automotive-grade-60-v-n-channel-mosfet","status":"publish","type":"post","link":"https:\/\/www.evearly.news\/en\/panjit-introduces-automotive-grade-60-v-n-channel-mosfet\/","title":{"rendered":"PANJIT introduces automotive-grade 60 V N-channel MOSFET"},"content":{"rendered":"<p><img src='https:\/\/www.evearly.news\/en\/wp-content\/uploads\/sites\/7\/2024\/12\/panjit-introduces-automotive-grade-60-v-n-channel-mosfet.jpg' alt='' ><br \/>Taiwanese semiconductor company PANJIT International has introduced its latest series of automotive-grade 60 V N-channel MOSFETs, featuring Shielded Gate Trench (SGT) technology to support power devices for automobiles. The series is engineered to deliver enhanced figure of merit (FOM), ultra-low RDS(ON) and minimized capacitance to enhance performance and energy efficiency in automotive electronic systems by&#8230;   <a href=https:\/\/chargedevs.com\/newswire\/panjit-introduces-automotive-grade-60-v-n-channel-mosfet\/ target=bwindow>Read more&#8230;<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p><img src='https:\/\/www.evearly.news\/en\/wp-content\/uploads\/sites\/7\/2024\/12\/panjit-introduces-automotive-grade-60-v-n-channel-mosfet.jpg' alt=''><br \/>Taiwanese semiconductor company PANJIT International has introduced its latest series of automotive-grade 60 V N-channel MOSFETs, featuring Shielded Gate Trench (SGT) technology to support power devices for automobiles. The series is engineered to deliver enhanced figure of merit (FOM), ultra-low RDS(ON) and minimized capacitance to enhance performance and energy efficiency in automotive electronic systems by&#8230;  <\/p>\n<p> <a class=\"continue-reading-link\" href=\"https:\/\/www.evearly.news\/en\/panjit-introduces-automotive-grade-60-v-n-channel-mosfet\/\"><\/a><\/p>\n","protected":false},"author":28,"featured_media":310434,"comment_status":"closed","ping_status":"open","sticky":false,"template":"Default","format":"standard","meta":{"footnotes":""},"categories":[11],"tags":[],"class_list":["post-310433","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-charged-evs"],"_links":{"self":[{"href":"https:\/\/www.evearly.news\/en\/wp-json\/wp\/v2\/posts\/310433","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.evearly.news\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.evearly.news\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.evearly.news\/en\/wp-json\/wp\/v2\/users\/28"}],"replies":[{"embeddable":true,"href":"https:\/\/www.evearly.news\/en\/wp-json\/wp\/v2\/comments?post=310433"}],"version-history":[{"count":0,"href":"https:\/\/www.evearly.news\/en\/wp-json\/wp\/v2\/posts\/310433\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.evearly.news\/en\/wp-json\/wp\/v2\/media\/310434"}],"wp:attachment":[{"href":"https:\/\/www.evearly.news\/en\/wp-json\/wp\/v2\/media?parent=310433"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.evearly.news\/en\/wp-json\/wp\/v2\/categories?post=310433"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.evearly.news\/en\/wp-json\/wp\/v2\/tags?post=310433"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}