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From SiC to Thin SiC: pushing power diodes to the next level


Sponsored by TTI. Nowadays, Silicon Carbide (SiC) and Gallium Nitride (GaN) are regular headline grabbers in the technical press. This is because devices constructed using these wide bandgap technologies are superior to their silicon counterparts across many critical metrics and open up new, previously unfeasible applications. This white paper describes the structure and applications of… Read more…

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