US-based Efficient Power Conversion (EPC), which supplies gallium nitride (GaN) power transistors and ICs, has introduced its EPC2367 100 V eGaN field-effect transistors (FET). Designed for 48 V intermediate voltage bus architectures, the EPC2367 reduces power loss, increasing efficiency and enabling more compact and cost-effective designs. Advantages of the EPC2367 include a compact 3.3 mm… Read more…
EPC introduces 100 V GaN Power Transistors
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EPC introduces 100 V GaN Power Transistors
US-based Efficient Power Conversion (EPC), which supplies gallium nitride (GaN) power transistors and ICs, has introduced its EPC2367 100 V eGaN field-effect transistors (FET). Designed for 48 V intermediate voltage bus architectures, the EPC2367 reduces power loss, increasing efficiency and enabling more compact and cost-effective designs. Advantages of the EPC2367 include a compact 3.3 mm… Read more…
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