Renesas Electronics has announced three new 650 V high-voltage gallium nitride (GaN) field-effect transistors (FETs) developed specifically for e-mobility charging stations, AI data center and server power supplies (including 800 V HVDC architectures) and battery energy storage. The fourth-generation plus (Gen IV Plus) devices—named TP65H030G4PRS, TP65H030G4PWS, and TP65H030G4PQS—are based on the proven SuperGaN platform acquired… Read more…