Toshiba Electronic Devices & Storage Corporation has introduced three 650 V silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) that use its third-generation SiC technology in surface-mount TOLL packages. These new devices, part numbers TW027U65C, TW048U65C, and TW083U65C, are designed for industrial power electronics with initial volume shipments beginning August 2025. The company reports that these… Read more…