
Navitas Semiconductor has launched its 5th-generation GeneSiC technology platform, a 1200 V SiC MOSFET line based on what the company calls Trench-Assisted Planar (TAP) architecture. The design combines the ruggedness of a planar gate structure with the performance benefits of a trench in the source region. The headline improvement is a 35% better RDS(on) x… Read more…
Navitas unveils 5th-generation SiC MOSFET platform with 35% improved switching figure of merit
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