The world’s largest chemical producer, Germany’s BASF, has developed a polyphthalamide (PPA) for manufacturing housings of insulated-gate bipolar transistor (IGBT) semiconductors for next-generation power electronics. The Ultramid Advanced N3U41 G6 is designed to meet the growing demand for high-performance, reliable electronic components for EVs, as well as high-speed trains, smart manufacturing and renewable electricity generation…. Read more…
BASF unveils new PPA housing material for IGBT semiconductors
Bookmark the permalink.