UK-based fabless semiconductor company Cambridge GaN Devices (CGD) and French public research and training organization IFP Energies nouvelles (IFPEN) have developed a demonstration that confirms the suitability of CGD’s ICeGaN650 V gallium nitride (GaN) integrated circuits (ICs) in a multi-level, 800 VDC inverter. The demo delivers high power density of 30 kW/l, which is greater… Read more…