NXP Semiconductors is working with Hitachi on a power module using 1200 V SiC transistors (writes Nick Flaherty). The collaboration combines NXP’s GD3160 isolated gate driver and Hitachi Energy’s RoadPak SiC half-bridge power modules for faster development of efficient, reliable and functionally safe EV powertrains using 900V battery packs.The RoadPak uses 1200 V SiC MOSFETs, […] More…